BSM75GB170DN2HOSA1 Infineon Technologies

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	110 A
Power - Max	625 W
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 75A
Current - Collector Cutoff (Max)	-
Input Capacitance (Cies) @ Vce	11 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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Price advantage, BSM75GB170DN2HOSA1 is available in stock and can be delivered on the same day

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