IR2235SPBF Infineon Technologies

Gate Drivers

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Specifications

Description	Details
Series	-
Package	Tube
Driven Configuration	Half-Bridge
Channel Type	3-Phase
Number of Drivers	6
Gate Type	IGBT, N-Channel MOSFET
Voltage - Supply	10V ~ 20V
Logic Voltage - VIL, VIH	0.8V, 2V
Current - Peak Output (Source, Sink)	250mA, 500mA
Input Type	Inverting
High Side Voltage - Max (Bootstrap)	1200 V
Rise / Fall Time (Typ)	90ns, 40ns
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	28-SOIC (0.295", 7.50mm Width)
Supplier Device Package	28-SOIC

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