APT102GA60B2 Microchip Technology

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	POWER MOS 8™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	183 A
Current - Collector Pulsed (Icm)	307 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 62A
Power - Max	780 W
Switching Energy	1.354mJ (on), 1.614mJ (off)
Input Type	Standard
Gate Charge	294 nC
Td (on/off) @ 25°C	28ns/212ns
Test Condition	400V, 62A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	-

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