IXGX50N60BD1 IXYS | XinMi Marketplace

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	HiPerFAST™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	75 A
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 50A
Power - Max	300 W
Switching Energy	1.5mJ (off)
Input Type	Standard
Gate Charge	110 nC
Td (on/off) @ 25°C	50ns/200ns
Test Condition	480V, 50A, 2.7Ohm, 15V
Reverse Recovery Time (trr)	50 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PLUS247™-3

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Price advantage, IXGX50N60BD1 is available in stock and can be delivered on the same day

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