IRG4P254SPBF Infineon Technologies

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	250 V
Current - Collector (Ic) (Max)	98 A
Current - Collector Pulsed (Icm)	196 A
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 55A
Power - Max	200 W
Switching Energy	380µJ (on), 3.5mJ (off)
Input Type	Standard
Gate Charge	200 nC
Td (on/off) @ 25°C	40ns/270ns
Test Condition	200V, 55A, 5Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AC

Other

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