RJP65T54DPM-E0#T2 Renesas Electronics America Inc

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	225 A
Vce(on) (Max) @ Vge, Ic	1.68V @ 15V, 30A
Power - Max	63.5 W
Switching Energy	330µJ (on), 760µJ (off)
Input Type	Standard
Gate Charge	72 nC
Td (on/off) @ 25°C	35ns/120ns
Test Condition	400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PFM, SC-93-3
Supplier Device Package	TO-3PF

Other

Price advantage, RJP65T54DPM-E0#T2 is available in stock and can be delivered on the same day

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