VS-GB100LH120N Vishay General Semiconductor - Diodes Division

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	200 A
Power - Max	833 W
Vce(on) (Max) @ Vge, Ic	1.77V @ 15V, 100A (Typ)
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	8.96 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Double INT-A-PAK (3 + 4)
Supplier Device Package	Double INT-A-PAK

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Price advantage, VS-GB100LH120N is available in stock and can be delivered on the same day

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