FS50R07N2E4BOSA1 Infineon Technologies

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	-
Configuration	Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	70 A
Power - Max	190 W
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 50A
Current - Collector Cutoff (Max)	1 mA
Input Capacitance (Cies) @ Vce	3.1 nF @ 25 V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 125°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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Price advantage, FS50R07N2E4BOSA1 is available in stock and can be delivered on the same day

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