TPH4R803PL,LQ Toshiba Semiconductor and Storage

MOSFETs - Single

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In Stock：7,489(Ref. price)

Qty.	Unit Price	Ext. Price
1	$0.70300	$0.70300

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Specifications

Description	Details
Series	U-MOSIX-H
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.8mOhm @ 24A, 10V
Vgs(th) (Max) @ Id	2.1V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1975 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	830mW (Ta), 69W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN

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