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2SJ355-T1-AZ

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In Stock:20,817(Ref. price)
Qty.Unit PriceExt. Price
1
$0.50350
$0.50350
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
350mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
12.2 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
SC-62
Package / Case
TO-243AA
Other
Price advantage, 2SJ355-T1-AZ is available in stock and can be delivered on the same day
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