HAT2201WP-EL-E Renesas Electronics America Inc

MOSFETs - Single

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In Stock：2,824(Ref. price)

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1	$1.14660	$1.14660

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	43mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1450 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-WPAK
Package / Case	8-PowerWDFN

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Price advantage, HAT2201WP-EL-E is available in stock and can be delivered on the same day

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