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MOSFETs - Single
HAT2201WP-EL-E Picture

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HAT2201WP-EL-E

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In Stock:2,824(Ref. price)
Qty.Unit PriceExt. Price
1
$1.14660
$1.14660
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
43mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
1450 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-WPAK
Package / Case
8-PowerWDFN
Other
Price advantage, HAT2201WP-EL-E is available in stock and can be delivered on the same day
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