IPI020N06NAKSA1 Infineon Technologies

MOSFETs - Single

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Specifications

Description	Details
Series	OptiMOS™
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs	106 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7800 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3-1
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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