N0300N-T1B-AT Renesas Electronics America Inc

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	SC-96-3, Thin Mini Mold
Package / Case	SC-96

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