SCTW40N120G2VAG STMicroelectronics

MOSFETs - Single

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In Stock：19,754(Ref. price)

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1230 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	290W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3

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