TK40E10N1,S1X Toshiba Semiconductor and Storage

MOSFETs - Single

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In Stock：1,233(Ref. price)

Qty.	Unit Price	Ext. Price
1	$1.80500	$1.80500

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Specifications

Description	Details
Series	U-MOSVIII-H
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	126W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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