IXFH18N100Q3 IXYS | XinMi Marketplace

MOSFETs - Single

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In Stock：428(Ref. price)

Qty.	Unit Price	Ext. Price
1	$16.30530	$16.30530

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Specifications

Description	Details
Series	HiPerFET™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	660mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4890 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	830W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AD (IXFH)
Package / Case	TO-247-3

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Price advantage, IXFH18N100Q3 is available in stock and can be delivered on the same day

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