SSM6J511NU,LF Toshiba Semiconductor and Storage

MOSFETs - Single

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In Stock：20,660(Ref. price)

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1	$0.50440	$0.50440

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Specifications

Description	Details
Series	U-MOSVII
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 4.5 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	3350 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-UDFNB (2x2)
Package / Case	6-WDFN Exposed Pad

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