SI4190DY-T1-GE3 Vishay Siliconix

MOSFETs - Single

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

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Price advantage, SI4190DY-T1-GE3 is available in stock and can be delivered on the same day

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