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RQ3E100BNTB Picture

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RQ3E100BNTB

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In Stock:15,643(Ref. price)
Qty.Unit PriceExt. Price
1
$0.39360
$0.39360
Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSMT (3.2x3)
Package / Case
8-PowerVDFN
Other
Price advantage, RQ3E100BNTB is available in stock and can be delivered on the same day
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