JANTX2N6796 Microsemi Corporation

MOSFETs - Single

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/557
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	195mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28.51 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	800mW (Ta), 25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-205AF (TO-39)
Package / Case	TO-205AD, TO-39-3 Metal Can

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