2N7635-GA GeneSiC Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	415mOhm @ 4A
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	324 pF @ 35 V
FET Feature	-
Power Dissipation (Max)	47W (Tc)
Operating Temperature	-55°C ~ 225°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-257
Package / Case	TO-257-3

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