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MOSFETs - Single
HCT7000M Picture

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HCT7000M

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In Stock:19,262(Ref. price)
Qty.Unit PriceExt. Price
1
$23.16864
$23.16864
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±40V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-SMD
Package / Case
3-SMD, No Lead
Other
Price advantage, HCT7000M is available in stock and can be delivered on the same day
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