IPD60N10S4L12ATMA1 Infineon Technologies

MOSFETs - Single

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In Stock：5,798(Ref. price)

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1	$1.52000	$1.52000

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Specifications

Description	Details
Series	Automotive, AEC-Q101, HEXFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	2.1V @ 46µA
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3170 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-313
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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