HAT2279N-EL-E Renesas Electronics America Inc

MOSFETs - Single

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In Stock：5,670(Ref. price)

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1	$1.90080	$1.90080

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	12.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	3.52 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	25W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-LFPAK-iV
Package / Case	8-PowerSOIC (0.154", 3.90mm Width)

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