GA04JT17-247 GeneSiC Semiconductor

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	480mOhm @ 4A
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	106W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AB
Package / Case	TO-247-3

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