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SI4413DDY-T1-GE3 Picture

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SI4413DDY-T1-GE3

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In Stock:19,606(Ref. price)
Qty.Unit PriceExt. Price
1
$0.94575
$0.94575
Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
114 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
4780 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 125°C
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Other
Price advantage, SI4413DDY-T1-GE3 is available in stock and can be delivered on the same day
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