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RM35P30LD Picture

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RM35P30LD

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In Stock:18,844(Ref. price)
Qty.Unit PriceExt. Price
1
$0.14355
$0.14355
Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1345 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
34.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252-2
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Other
Price advantage, RM35P30LD is available in stock and can be delivered on the same day
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