BSM400C12P3G202 Rohm Semiconductor

MOSFETs - Single

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In Stock：2,395(Ref. price)

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1	$896.7	$896.7

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Specifications

Description	Details
Series	-
Package	Tray
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	400A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	5.6V @ 106.8mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	17000 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1570W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	Module
Package / Case	Module

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