BSL316CL6327HTSA1 Infineon Technologies

MOSFETs - Arrays

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Specifications

Description	Details
Series	OptiMOS™
Package	Bulk
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	1.4A, 1.5A
Rds On (Max) @ Id, Vgs	160mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id	2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs	0.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	94pF @ 15V
Power - Max	500mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	PG-TSOP-6-6

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