SP8M8FD5TB1 Rohm Semiconductor

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6A (Ta), 4.5A (Ta)
Rds On (Max) @ Id, Vgs	30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	7.2nC @ 5V, 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	520pF @ 10V, 850pF @ 10V
Power - Max	2W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP

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