TPC8211(TE12L,Q,M) Toshiba Semiconductor and Storage

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.5A
Rds On (Max) @ Id, Vgs	36mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1250pF @ 10V
Power - Max	450mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.173", 4.40mm Width)
Supplier Device Package	8-SOP (5.5x6.0)

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Price advantage, TPC8211(TE12L,Q,M) is available in stock and can be delivered on the same day

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