IRF7507PBF Infineon Technologies

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.4A, 1.7A
Rds On (Max) @ Id, Vgs	140mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	260pF @ 15V
Power - Max	1.25W
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package	Micro8™

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