SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	180mA, 100mA
Rds On (Max) @ Id, Vgs	3Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	9.5pF @ 3V
Power - Max	200mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6

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