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MOSFETs - Arrays
APTSM120AM55CT1AG Picture

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APTSM120AM55CT1AG

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In Stock:18,066(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
2 N-Channel (Dual), Schottky
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
74A (Tc)
Rds On (Max) @ Id, Vgs
50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
3V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
272nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
5120pF @ 1000V
Power - Max
470W
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP1
Supplier Device Package
SP1
Other
Price advantage, APTSM120AM55CT1AG is available in stock and can be delivered on the same day
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