AOP605 Alpha & Omega Semiconductor Inc.

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	-
Rds On (Max) @ Id, Vgs	28mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 15V
Power - Max	2.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	8-DIP (0.300", 7.62mm)
Supplier Device Package	8-PDIP

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