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EPC2110ENGRT Picture

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EPC2110ENGRT

  • EPC
  • New
  • GAN TRANS 2N-CH 120V BUMPED DIE
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In Stock:17,992(Ref. price)
Qty.Unit PriceExt. Price
1
$2.25150
$2.25150
Documents
Specifications
DescriptionDetails
Series
eGaN®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
2 N-Channel (Dual) Common Source
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25°C
3.4A
Rds On (Max) @ Id, Vgs
60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id
2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
80pF @ 60V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Other
Price advantage, EPC2110ENGRT is available in stock and can be delivered on the same day
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