RN1105MFV,L3F Toshiba Semiconductor and Storage

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	150 mW
Mounting Type	Surface Mount
Package / Case	SOT-723
Supplier Device Package	VESM

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Price advantage, RN1105MFV,L3F is available in stock and can be delivered on the same day

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