2SA1930(Q,M) Toshiba Semiconductor and Storage

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	180 V
Vce Saturation (Max) @ Ib, Ic	1V @ 100mA, 1A
Current - Collector Cutoff (Max)	5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
Power - Max	2 W
Frequency - Transition	200MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220NIS

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