MRF517 Microsemi Corporation | XinMi Marketplace

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	4GHz
Noise Figure (dB Typ @ f)	-
Gain	9dB ~ 10dB
Power - Max	2.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 60mA, 10V
Current - Collector (Ic) (Max)	150mA
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

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Price advantage, MRF517 is available in stock and can be delivered on the same day

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