ULN2003APG,CN Toshiba Semiconductor and Storage

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	7 NPN Darlington
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)	50µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 350mA, 2V
Power - Max	1.47W
Frequency - Transition	-
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Through Hole
Package / Case	16-DIP (0.300", 7.62mm)
Supplier Device Package	16-DIP

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