HN1C01F-GR(TE85L,F Toshiba Semiconductor and Storage

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA, 6V
Power - Max	300mW
Frequency - Transition	800MHz
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	SM6

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Price advantage, HN1C01F-GR(TE85L,F is available in stock and can be delivered on the same day

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