1N8030-GA GeneSiC Semiconductor

Diodes - Rectifiers - Single

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Specifications

Description	Details
Series	-
Package	Tube
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	750mA
Voltage - Forward (Vf) (Max) @ If	1.39 V @ 750 mA
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	5 µA @ 650 V
Capacitance @ Vr, F	76pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-257-3
Supplier Device Package	TO-257
Operating Temperature - Junction	-55°C ~ 250°C

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